The Electron and Hole Effective Masses in Thermal Silicon Dioxide Determined from the Perspective of a Semiconductor
Keywords:Bandgap, 4H-SiC, MOS device, Composite materials
Three experimentally determined parameters of valence band to oxide conduction band offset, the bandgap of 4H-SiC, and the longitudinal electron effective mass in 4H-SiC, coupled with the universal mass-energy equivalence relation, facilitate the determination of the electron and hole effective masses in thermal silicon dioxide of a metal-oxide-semiconductor (MOS) device without prior knowledge of any of the oxide masses.
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Copyright (c) 2023 Ravi Kumar Chanana
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