Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?

Authors

  • Ravi Kumar Chanana Self-Employed Independent Researcher, Gr. Noida-201310, India

DOI:

https://doi.org/10.14738/tecs.115.15831

Keywords:

Mass-Energy equivalence, MOS device, AlN, Tunnelling

Abstract

The question of whether one can make an efficient metal-oxide-semiconductor (MOS) device using wurtzite Aluminium Nitride semiconductor is answered in this short communication.

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Published

2023-11-05

How to Cite

Chanana, R. K. (2023). Can an Efficient Metal-Oxide-Semiconductor Device be Made from Aluminium Nitride Ultra-Wide Bandgap Semiconductor?. Transactions on Engineering and Computing Sciences, 11(5), 109–110. https://doi.org/10.14738/tecs.115.15831

Issue

Vol. 11 No. 5 (2023): Transactions on Engineering and Computing Sciences

Section

Articles

License

Copyright (c) 2023 Ravi Kumar Chanana

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.