Interrelated Channel Current and Oxide Leakage Current Density in a MOSFET Device

Abstract

This research paper discusses the observed lower Fowler-Nordheim (FN) onset electric field in the thermal SiO₂ grown on the (110) surface of the 4H-SiC semiconductor than on the (0001) oriented surface.  This forms the metal-oxide-semiconductor (MOS) device which is the essential part of the MOSFET device as a transistor.  First, the FN onset field is revised to a new value of 4.6 MV/cm, and then the mechanism for the lowering of the field is described.