CHANANA, R. K. Metal-Insulator-Semiconductor Characterization by Fowler-Nordheim Carrier Tunnelling Currents Through MOS Devices. Transactions on Engineering and Computing Sciences, [S. l.], v. 11, n. 5, p. 45–50, 2023. DOI: 10.14738/tecs.115.15489. Disponível em: https://journals.scholarpublishing.org/index.php/TMLAI/article/view/15489. Acesso em: 23 jul. 2024.