CHANANA, R. K. Electrical Properties of Sub-1nm Diameter Silicon Nanowire Metal-Oxide-Semiconductor Device. European Journal of Applied Sciences, [S. l.], v. 13, n. 05, p. 128–130, 2025. DOI: 10.14738/aivp.1305.19403. Disponível em: https://journals.scholarpublishing.org/index.php/AIVP/article/view/19403. Acesso em: 5 dec. 2025.